bbs3002 no. a1357-1/4 features ? on-resistance r ds (on)1=4.4m (typ.) ? input capacitance ciss=13200pf (typ.) ? 4v drive speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit drain-to-source voltage v dss --60 v gate-to-source voltage v gss 20 v drain current (dc) i d --100 a drain current (pulse) i dp pw 10 s, duty cycle 1% --400 a allowable power dissipation p d tc=25 c 90 w channel temperature tch 150 c storage temperature tstg --55 to +150 c avalanche energy (single pulse) *1 e as 340 mj avalanche current *2 i av --60 a note : * 1 v dd =--30v, l=100 h, i av =--60a (fig.1) * 2 l 100 h, single pulse package dimensions unit : mm (typ) 7535-001 12512 tkim tc-00002684/n1208qa msim tc-00001708 sanyo semiconductors data sheet bbs3002 p-channel silicon mosfet general-purpose switching device applications http:// semicon.sanyo.com/en/network ordering number : ena1357a product & package information ? package : to-263-2l ? jeita, jedec : sc-83, to-263 ? minimum packing quantity : 800 pcs./reel electrical connection marking 1 3 2, 4 1 : gate 2 : drain 3 : source 4 : drain sanyo : to-263-2l 10.0 5.3 1.27 0.8 2.54 2.54 13.4 9.2 7.9 1.4 1.2 0 to 0.25 2.4 1.75 0.9 3.0 1.35 0.254 4.5 8.0 1.3 0.5 123 4 bs3002 lot no.
bbs3002 no. a1357-2/4 electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max drain-to-source breakdown voltage v (br)dss i d =--1ma, v gs =0v --60 v zero-gate voltage drain current i dss v ds =--60v, v gs =0v --1 a gate-to-source leakage current i gss v gs =16v, v ds =0v 10 a cutoff voltage v gs (off) v ds =--10v, i d =--1ma --1.2 --2.6 v forward transfer admittance | yfs | v ds =--10v, i d =--50a 54 90 s static drain-to-source on-state resistance r ds (on)1 i d =--50a, v gs =--10v 4.4 5.8 m r ds (on)2 i d =--50a, v gs =--4v 6.4 9.0 m input capacitance ciss v ds =--20v, f=1mhz 13200 pf output capacitance coss 1300 pf reverse transfer capacitance crss 950 pf turn-on delay time t d (on) see fig.2 95 ns rise time t r 1000 ns turn-off delay time t d (off) 800 ns fall time t f 820 ns total gate charge qg v ds =--30v, v gs =--10v, i d =--100a 280 nc gate-to-source charge qgs 50 nc gate-to-drain ?miller? charge qgd 55 nc diode forward voltage v sd i s =--100a, v gs =0v --1.0 --1.5 v fig.1 avalanche resistance test circuit fig.2 switching time test circuit 50 0v --10v 50 rg v dd l bbs3002 pw=10 s d.c. 1% p. g 50 g s d i d = --50a r l =0.6 v dd = --30v v ou t v in 0v --10v v in bbs3002 i d -- v ds i d -- v gs drain-to-source voltage, v ds -- v drain current, i d -- a gate-to-source voltage, v gs -- v drain current, i d -- a it14173 75 c 25 c tc= --25 c --25 c tc=75 c --0.2 --0.6 --0.4 --0.8 --1.0 --1.4 --1.2 --2.0 --1.8 --1.6 0 0 --20 --40 --200 --160 --140 --120 --100 --180 --80 --60 0 --20 --40 --200 --160 --140 --120 --100 --180 --80 --60 0 it14174 --0.5 --1.5 --2.0 --1.0 --2.5 --4.0 --4.5 --5.0 --3.5 --3.0 0 tc=25 c --4v v gs = --3v -- 1 0 v --6v v ds = --10v 25 c --8v
bbs3002 no. a1357-3/4 r ds (on) -- v gs r ds (on) -- tc i s -- v sd sw time -- i d gate-to-source voltage, v gs -- v case temperature, tc -- c static drain-to-source on-state resistance, r ds (on) -- m static drain-to-source on-state resistance, r ds (on) -- m drain current, i d -- a drain current, i d -- a switching time, sw time -- ns drain-to-source voltage, v ds -- v ciss, coss, crss -- pf diode forward voltage, v sd -- v | y fs | -- i d forward transfer admittance, | y fs | -- s ciss, coss, crss -- v ds source current, i s -- a it14176 --50 --25 150 0 --30 --10 --15 --20 --25 -- 5 1000 3 2 it14180 it14178 it14177 --0.1 --1.0 23 57 3 100 --1.2 --1.0 --0.8 --0.4 --0.2 --0.6 0 --0.001 --0.01 5 7 3 2 5 7 3 2 5 7 3 2 5 7 3 2 5 3 7 3 2 2 --0.1 --1.0 --10 --100 7 5 3 7 2 3 10 1.0 7 5 2 2 10000 2 2 --10 357 --100 57 23 --0.1 --1.0 23 57 2 --10 357 --100 57 23 0 25 50 75 100 125 3 5 7 5 7 i d = --50a single pulse single pulse tc=75c 25c --25c tc= --25 c 25 c 75 c v ds = --10v tc=75 c 25 c --25 c v gs =0v single pulse ciss crss it14179 100 1000 3 2 3 2 5 5 5 7 7 t d (off) v dd = --30v v gs = --10v f=1mhz t r it14175 -- 3 --2 --4 --5 --6 --7 --10 -- 8 -- 9 0 2 12 8 10 4 6 4 2 0 8 6 20 16 14 12 10 18 t f v gs = --4v, i d = --50a v gs = --10v, i d = --50a coss t d (on) v gs -- qg total gate charge, qg -- nc gate-to-source voltage, v gs -- v it14182 a s o drain-to-source voltage, v ds -- v drain current, i d -- a --0.1 --1.0 2 3 5 7 2 3 5 7 2 7 3 5 2 3 5 7 --10 --0.1 i dp = --400a i d = --100a 100 s 1ms 10ms 100ms dc operation operation in this area is limited by r ds (on). tc=25 c single pulse --1.0 23 57 2 --10 --100 357 2357 10 s --100 --1000 pw 10 s it14181 0 50 200 150 250 100 300 0 -- 2 -- 4 -- 6 -- 1 -- 3 -- 5 -- 8 -- 7 -- 9 --10 v ds = --30v i d = --100a
bbs3002 no. a1357-4/4 ps this catalog provides information as of january, 2012. speci cations and information herein are subject to change without notice. note on usage : since the bbs3002 is a mosfet product, please avoid using this device in the vicinity of highly charged objects. any and all sanyo semiconductor co.,ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. the products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. if you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. if there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer ' s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. sanyo semiconductor co.,ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein. sanyo semiconductor co.,ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. it is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo semiconductor co.,ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of sanyo semiconductor co.,ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor co.,ltd. product that you intend to use. upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of sanyo semiconductor co.,ltd. or any third party. sanyo semiconductor co.,ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. 0 0 25 50 75 100 125 150 100 80 60 20 40 120 175 e as -- ta avalanche energy derating factor -- % ambient temperature, ta -- c it14184 it14183 p d -- tc allowable power dissipation, p d -- w case temperature, tc -- c 0 0 20 40 60 80 100 140 120 60 70 80 90 50 30 20 40 10 100 160
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